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NE321000 Datasheet (PDF) - Renesas Technology Corp
NE321000 Datasheet PDF - Renesas Technology Corp
Part # NE321000
Download  NE321000 Download
File Size   215.03 Kbytes
Page   14 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description HETERO JUNCTION FIELDEFFECT TRANSISTOR

NE321000 Datasheet (PDF)

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NE321000 Datasheet PDF - Renesas Technology Corp

Part # NE321000
Download  NE321000 Click to download

File Size   215.03 Kbytes
Page   14 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description HETERO JUNCTION FIELDEFFECT TRANSISTOR

NE321000 Datasheet (HTML) - Renesas Technology Corp


NE321000 Product details

DESCRIPTION
The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and
space applications.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz
• Gate Length: Lg £ 0.20 mm
• Gate Width : Wg = 160 mm




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About Renesas Technology Corp

Renesas Technology Corp is a Japanese semiconductor company that provides a wide range of microcontrollers, system-on-chips, and analog and power devices for various applications in the automotive, industrial, and consumer markets.
The company was formed in 2010 through the merger of NEC Electronics Corporation and Renesas Technology Corporation.
Renesas is one of the largest microcontroller suppliers in the world and is known for its expertise in the development of advanced technologies in areas such as the Internet of Things (IoT), artificial intelligence (AI), and automotive electronics.
The company has operations in over 20 countries and its products are used in a wide range of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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