N-CHANNEL SILICON POWER LDMOS FET
FOR 135 W UHF-BAND SINGLE-END POWER AMPLIFIER

DESCRIPTION
The NEM091203P-28 is an N-channel enhancement-mode lateral diffused MOS FET designed for 850 to 960 MHz
applications, such as, GSM/EDGE/N-CDMA cellular base station. Dies are manufactured using our NEWMOS
technology (our WSi gate lateral MOS FET), and its nitride surface passivation and quadruple layer aluminum silicon
metallization offer a high degree of reliability.
FEATURES
• High 1 dB compression output power : PO (1 dB) = 135 W TYP. (VDS = 28 V, IDset = 1 200 mA,
f = 850 to 960 MHz CW)
• High linear gain : GL = 17.0 dB TYP. (VDS = 28 V, IDset = 1 200 mA, f = 850 to 960 MHz CW)
• High drain efficiency : ηd = 58% TYP. (VDS = 28 V, IDset = 1 200 mA, f = 850 to 960 MHz CW)
• Low intermodulation distortion : IM3 = −40 dBc TYP. (VDS = 28 V, IDset = 1 200 mA, f = 960/960.1 MHz, Pout = 45 dBm (2 tones) )
: IM3 = −40 dBc TYP. (VDS = 28 V, IDset = 1 200 mA, f = 880/880.1 MHz,
Pout = 45 dBm (2 tones) )
• Internal matched (Input and Output) for ease of use
• Low cost hollow plastic packages
• 100% screening
• Integrated ESD protection
• Effective prevention against humidity
• Excellent stability against HCI (Hot Carrier Injection)