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NESG204619 Datasheet (PDF) - Renesas Technology Corp
NESG204619 Datasheet PDF - Renesas Technology Corp
Part # NESG204619
Download  NESG204619 Download
File Size   302.01 Kbytes
Page   10 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description NPN SILICON GERMANIUM RF TRANSISTOR

NESG204619 Datasheet (PDF)

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NESG204619 Datasheet PDF - Renesas Technology Corp

Part # NESG204619
Download  NESG204619 Click to download

File Size   302.01 Kbytes
Page   10 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description NPN SILICON GERMANIUM RF TRANSISTOR

NESG204619 Datasheet (HTML) - Renesas Technology Corp


NESG204619 Product details

NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

FEATURES
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
• 3-pin ultra super minimold (19, 1608 PKG) package




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About Renesas Technology Corp

Renesas Technology Corp is a Japanese semiconductor company that provides a wide range of microcontrollers, system-on-chips, and analog and power devices for various applications in the automotive, industrial, and consumer markets.
The company was formed in 2010 through the merger of NEC Electronics Corporation and Renesas Technology Corporation.
Renesas is one of the largest microcontroller suppliers in the world and is known for its expertise in the development of advanced technologies in areas such as the Internet of Things (IoT), artificial intelligence (AI), and automotive electronics.
The company has operations in over 20 countries and its products are used in a wide range of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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