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NP24N10ELB Datasheet (PDF) - Renesas Technology Corp

NP24N10ELB Datasheet PDF - Renesas Technology Corp
Part # NP24N10ELB
Download  NP24N10ELB Download
File Size   239.31 Kbytes
Page   10 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description MOS FIELD EFFECT TRANSISTOR

NP24N10ELB Datasheet (PDF)

Go To PDF Page Download Datasheet
NP24N10ELB Datasheet PDF - Renesas Technology Corp

Part # NP24N10ELB
Download  NP24N10ELB Click to download

File Size   239.31 Kbytes
Page   10 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description MOS FIELD EFFECT TRANSISTOR

NP24N10ELB Datasheet (HTML) - Renesas Technology Corp


NP24N10ELB Product details

SWITCHING
N-CHANNEL POWER MOS FET

DESCRIPTION
These products are N-channel MOS Field Effect
Transistor designed for high current switching
applications.
FEATURES
•Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on)1 = 80 mΩ MAX. (VGS = 10 V, ID = 12 A)
RDS(on)2 = 93 mΩ MAX. (VGS = 5.0 V, ID = 10 A)
• Low Ciss: Ciss = 1300 pF TYP.
• Built-in gate protection diode




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About Renesas Technology Corp


Renesas Technology Corp is a Japanese semiconductor company that provides a wide range of microcontrollers, system-on-chips, and analog and power devices for various applications in the automotive, industrial, and consumer markets.
The company was formed in 2010 through the merger of NEC Electronics Corporation and Renesas Technology Corporation.
Renesas is one of the largest microcontroller suppliers in the world and is known for its expertise in the development of advanced technologies in areas such as the Internet of Things (IoT), artificial intelligence (AI), and automotive electronics.
The company has operations in over 20 countries and its products are used in a wide range of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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