| Manufacturer | Part # | Datasheet | Description |
VIGO Photonics S.A. |
PVI4TE6TO8-36-DTE
|
722Kb / 2P |
3.0 – 6.9 μm HgCdTe four-stage thermoelectrically cooled, optically immersed photovoltaic detector
25/09/2020 |
|
PCI3TE12TO8-36-DTE
|
719Kb / 2P |
2 – 14 μm HgCdTe three-stage thermoelectrically cooled, optically immersed photoconductive detector
25/09/2020 |
|
PCI-2TE
|
797Kb / 2P |
1.0 – 15.0 μm HgCdTe two-stage thermoelectrically cooled, optically immersed photoconductive detectors
08/11/2020 |
|
PVA-2TE-4.5-1
|
725Kb / 2P |
PVA-2TE-4.5-1×1-TO8-wAl2O3-70 – ENGINEERING SAMPLE 2.3 – 4.9 μm InAsSb two-stage thermoelectrically cooled photovoltaic detector
07/09/2021 |
|
PVI-2TE-4-1
|
701Kb / 2P |
PVI-2TE-4-1×1-TO8-wAl2O3-36 2.4 – 4.3 μm HgCdTe two-stage thermoelectrically cooled, optically immersed photovoltaic detector
25/09/2020 |
|
PVI-2TE
|
799Kb / 2P |
2 – 12 μm HgCdTe two-stage thermoelectrically cooled, optically immersed photovoltaic detectors
25/09/2020 |
|
PVI-3TE
|
796Kb / 2P |
2 – 12 μm HgCdTe three-stage thermoelectrically cooled, optically immersed photovoltaic detectors
04/03/2021 |
|
PVI-4TE
|
799Kb / 2P |
2 – 12 μm HgCdTe four-stage thermoelectrically cooled, optically immersed photovoltaic detectors
24/02/2021 |
|
PVI-5-1
|
671Kb / 2P |
PVI-5-1×1-TO39-NW-36 2.4 – 5.5 μm HgCdTe ambient temperature, optically immersed photovoltaic detector
25/09/2020 |
|
PVMI-2TE
|
769Kb / 2P |
2.0 – 13.0 μm HgCdTe two-stage thermoelectrically cooled, optically immersed photovoltaic multiple junction detectors
09/11/2020 |
New Zealand ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
