Features
• 3rd generation SiC MOSFET technology
• Optimized package with separate driver source pin
• 8mm of creepage distance between drain and source
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Qrr)
• Halogen free, RoHS compliant
• Automotive Qualified (AEC-Q101) and PPAP Capable
Benefits
• Reduce switching losses and minimize gate ringing
• Higher system efficiency
• Reduce cooling requirements
• Increase power density
• Increase system switching frequency
Applications
• EV battery chargers
• High Voltage DC/DC converters