2SC5752 Datasheet(PDF) - NEC

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2SC5752 Datasheet (PDF) - NEC

2SC5752 Datasheet PDF - NEC


Part #	2SC5752

Download	2SC5752 Download

File Size	91.41 Kbytes

Page	20 Pages

Manufacturer	NEC [NEC]

Direct Link	http://www.nec.com/

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Description

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD

2SC5752 Datasheet (PDF)

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2SC5752 Datasheet PDF - NEC


Part #	2SC5752

Download	2SC5752 Click to download

File Size	91.41 Kbytes

Page	20 Pages

Manufacturer	NEC [NEC]

Direct Link	http://www.nec.com/

Logo

Description	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD

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2SC5752 Product details

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD

FEATURES
• Ideal for medium output power amplification
• PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm
• HFT3 technology (fT = 12 GHz) adopted
• High reliability through use of gold electrodes
• 4-pin super minimold package

Similar Part No. - 2SC5752

Manufacturer	Part #	Datasheet	Description
California Eastern Labs	2SC5752	3Mb / 17P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION
Renesas Technology Corp	2SC5752	224Kb / 22P	NPN SILICON RF TRANSISTOR 2001
	2SC5752-T1	224Kb / 22P	NPN SILICON RF TRANSISTOR 2001
	2SC5752	225Kb / 22P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD

Similar Description - 2SC5752

Manufacturer	Part #	Datasheet	Description
NEC	2SC5754	89Kb / 13P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
NEC	NESG2101M16	135Kb / 13P	NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
Renesas Technology Corp	NESG2101M05	172Kb / 15P	NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW
California Eastern Labs	2SC5752	3Mb / 17P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION
Renesas Technology Corp	2SC5750	216Kb / 18P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) 4-PIN SUPER MINIMOLD
	2SC5751	217Kb / 18P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
	2SC5752	225Kb / 22P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD
	2SC5753	224Kb / 22P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
	2SC5754	222Kb / 15P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
	2SC5750	216Kb / 18P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION July 2001

About NEC

NEC Corporation is a Japanese multinational information technology and electronics company. The company was founded in 1899 and is headquartered in Tokyo, Japan. NEC provides a wide range of products and services including information technology, telecommunications, and electronics. Its portfolio includes computer hardware, software, and services, network solutions, display solutions, and enterprise servers and storage solutions.

NEC is known for its expertise in the field of information technology and its ability to deliver innovative and high-quality products and services. The company has operations and facilities in various countries across the world and has a strong presence in the Asia-Pacific region. NEC works closely with its customers to provide customized solutions that meet their specific requirements and needs.

In addition to its core business, NEC is also active in the fields of research and development, and is involved in various projects related to advanced technologies such as artificial intelligence, 5G networks, and the Internet of Things (IoT). NEC is committed to delivering sustainable solutions that support the development of society and improve the quality of life for people around the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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