1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Higher operating power due to low
thermal resistance
Low conduction losses due to low
on-state resistance
Simple gate drive required due to low
gate charge
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
AC-to-DC secondary side rectification
DC-to-DC converters