GENERAL DESCRIPTION
The Austin Semiconductor, Inc. Synchronous Burst SRAM family employs high-speed, low power CMOS designs that are fabricated using an advanced CMOS process.

FEATURES
• Fast access times: 8, 10, and 15ns
• Fast clock speed: 113, 100, and 66 MHz
• Fast clock and OE access times
• Single +3.3V +0.3V/-0.165V power supply (VDD)
• SNOOZE MODE for reduced-power standby
• Common data inputs and data outputs
• Individual BYTE WRTIE control and GLOBAL WRITE
• Three chip enables for simple depth expansion and address pipelining
• Clock-controlled and registered addresses, data I/Os and control signals
• Interally self-timed WRITE cycle
• Burst control pin (interleaved or linear burst)
• Automatic power-down
• Low capacitive bus loading
• Operating Temperature Ranges:
    - Military -55°C to +125°C
    - Industrial -40°C to +85°C