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ESD9N12BA Datasheet (PDF) - EVER SEMICONDUCTOR CO.,LIMITED

ESD9N12BA Datasheet PDF - EVER SEMICONDUCTOR CO.,LIMITED
Part # ESD9N12BA
Download  ESD9N12BA Download
File Size   519.47 Kbytes
Page   5 Pages
Manufacturer  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
Direct Link  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED
Description DFN1006-2 ESD Protection Devices ROHS

ESD9N12BA Datasheet (PDF)

Go To PDF Page Download Datasheet
ESD9N12BA Datasheet PDF - EVER SEMICONDUCTOR CO.,LIMITED

Part # ESD9N12BA
Download  ESD9N12BA Click to download

File Size   519.47 Kbytes
Page   5 Pages
Manufacturer  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
Direct Link  https://www.evvosemi.com
Logo EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED
Description DFN1006-2 ESD Protection Devices ROHS

ESD9N12BA Datasheet (HTML) - EVER SEMICONDUCTOR CO.,LIMITED


ESD9N12BA Product details

Descriptions
The ESD9N12BA is a TVS (Transient Voltage
Suppressor) designed to protect sensitive electronic
components which are connected to data and
transmission lines from over-stress caused by ESD
(Electrostatic Discharge), EFT (Electrical Fast Transients)
and lightning.
The ESD9N12BA may be used to provide ESD
protection up to ±30kV (contact discharge) according to
IEC61000-4-2, and withstand peak pulse current up to
5.5A (8/20μs) according to IEC61000-4-5.
The ESD9N12BA is available in DFN1006-2L package.
Standard products are Pb-free and Halogen-free.

Features
Stand-off voltage: ±12V Max.
Transient protection for each line according to
IEC61000-4-2 (ESD): ±30kV (contact discharge)
IEC61000-4-5 (surge): 5.5A (8/20μs)
Capacitance: CJ = 27pF typ.
Ultra-low leakage current: IR = 0.1nA typ.
Low clamping voltage: VCL = 20V typ. @ IPP = 16A (TLP)
Solid-state silicon technology

Applications
Computers and peripherals
Cellular handsets
Portable Electronics
Notebooks




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