• State-of-the-Art BiCMOS Design
Significantly Reduces ICCZ
• ESD Protection Exceeds 2000 V Per
MIL-STD-883C, Method 3015; Exceeds
200 V Using Machine Model (C = 200 pF,
R = 0)
• 3-State Outputs Drive Bus Lines or Buffer
Memory Address Registers
• P-N-P Inputs Reduce DC Loading
• Flow-Through Architecture Optimizes
PCB Layout
• Package Options Include Plastic
Small-Outline (DW) Packages, Ceramic Chip
Carriers (FK) and Flatpacks (W), and
Standard Plastic and Ceramic 300-mil DIPs
(JT, NT)

description
These 10-bit buffers and bus drivers provide
high-performance bus interface for wide data
paths or buses carrying parity.
The 3-state control gate is a 2-input AND gate with
active-low inputs so that if either output-enable
(OE1 or OE2) input is high, all ten outputs are in
the high-impedance state. The outputs are also in
the high-impedance state during power-up and
power-down conditions. The outputs remain in the
high-impedance state while the device is powered
down.
The SN54BCT29827B is characterized for
operation over the full military temperature range
of −55°C to 125°C. The SN74BCT29827B is
characterized for operation from 0°C to 70°C.