Members of the Texas Instruments
WidebusE Family
State-of-the-Art EPIC-IIBE BiCMOS Design
Significantly Reduces Power Dissipation
Typical VOLP (Output Ground Bounce) < 1 V
at VCC = 5 V, TA = 25°C
Distributed VCC and GND Pin Configuration
Minimizes High-Speed Switching Noise
Flow-Through Architecture Optimizes PCB
Layout
High-Drive Outputs (–32-mA IOH, 64-mA IOL)
Latch-Up Performance Exceeds 500 mA
Per JESD 17
ESD Protection Exceeds 2000 V Per
MIL-STD-883, Method 3015; Exceeds 200 V
Using Machine Model (C = 200 pF, R = 0)
Package Options Include Plastic 300-mil
Shrink Small-Outline (DL), Thin Shrink
Small-Outline (DGG), and Thin Very
Small-Outline (DGV) Packages and 380-mil
Fine-Pitch Ceramic Flat (WD) Package
Using 25-mil Center-to-Center Spacings

description
The ’ABT16241A devices are 16-bit buffers and
line drivers designed specifically to improve both
the performance and density of 3-state memory
address drivers, clock drivers, and bus-oriented
receivers and transmitters.
These devices can be used as four 4-bit buffers, two 8-bit buffers, or one 16-bit buffer. These devices provide
true outputs and complementary output-enable (OE and OE) inputs.
To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup
resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver. OE
should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the
current-sourcing capability of the driver.
The SN54ABT16241A is characterized for operation over the full military temperature range of –55°C to 125°C.
The SN74ABT16241A is characterized for operation from –40°C to 85°C.