State-of-the-Art EPIC-IIBE BiCMOS Design
Significantly Reduces Power Dissipation
ESD Protection Exceeds 2000 V Per
MIL-STD-883, Method 3015; Exceeds 200 V
Using Machine Model (C = 200 pF, R = 0)
Latch-Up Performance Exceeds 500 mA Per
JEDEC Standard JESD-17
Typical VOLP (Output Ground Bounce) < 1 V
at VCC = 5 V, TA = 25°C
High-Impedance State During Power Up
and Power Down
Designed to Facilitate Incident-Wave
Switching for Line Impedances of 25 W or
Greater
Distributed VCC and GND Pin Configuration
Minimizes High-Speed Switching Noise
Bus Hold on Data Inputs Eliminates the
Need for External Pullup/Pulldown
Resistors
Package Options Include Plastic
Small-Outline (DW) Package, Ceramic Chip
Carriers (FK), and Standard Plastic (NT)
and Ceramic (JT) DIPs

description
The ’ABTH25245 are 25-W octal bus transceivers
designed for asynchronous communication
between data buses. They improve both the
performance and density of 3-state memory
address drivers, clock drivers, and bus-oriented
transceivers.
These devices allow noninverted data
transmission from the A bus to the B bus or from
the B bus to the A bus, depending on the logic level
at the direction-control (DIR) input. The
output-enable (OE) input can disable the device
so that both buses are effectively isolated. When
OE is low, the device is active.
These transceivers are capable of sinking 188 mA of IOL current, which facilitates switching 25-W transmission
lines on the incident wave. The distributed VCC and GND pins minimize switching noise for more-reliable system
operation.
Active bus-hold circuitry is provided to hold unused or floating data inputs at a valid logic level.