1. General description
240 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56
package using advanced TrenchMOS Superjunction technology. This product has been designed
and qualified for high performance power switching applications.
2. Features and benefits
• 240 A capability
• Avalanche rated, 100% tested at IAS = 190 A
• NextPower-S3 technology delivers 'superfast switching with soft recovery'
• Low QRR, QG and QGD for high system efficiency and low EMI designs
• Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage
• Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology
• High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and
qualified to 175 °C
• Exposed leads can be wave soldered, visual solder joint inspection and high quality solder
joints
• Low parasitic inductance and resistance
3. Applications
• Synchronous rectification
• DC-to-DC converters
• High performance & high efficiency server power supply
• Motor control
• Power OR-ing