1 Features
• AEC-Q100 qualified for automotive applications -
Temperature options:
– DRV3233EPHP: –40°C to +150°C, TA
– DRV3233QPHP: –40°C to +125°C,TA
• Functional Safety-Compliant targeted
– Developed for functional safety applications
– Documentation to aid ISO 26262 system design
will be available
– Systematic capability up to ASIL D targeted
• Three phase half-bridge gate driver
– Drives six N-channel MOSFETs (NMOS)
– 4.5 to 60V wide operating voltage range
– Bootstrap architecture for high-side gate driver
– Charge pump for 50mA average gate current
– 100% PWM duty cycle support
– Overdrive supply of external switches
• Smart Gate Drive architecture
– 45-level configurable peak gate drive current up
to 1000 / 2000mA (source / sink)
– Three-step dynamic drive current control
– Soft shutdown for power stage protection
• Low-side Current Sense Amplifier
– Sub-1mV low input offset across temperature
– 9-level adjustable gain
• SPI-based detailed configuration and diagnostics
• DRVOFF pin to disable driver independently
• High voltage wake up pin (nSLEEP)
• Multiple PWM interface options available
– 6x, 3x, 1x PWM Modes
– PWM over SPI
• Supports 3.3V, and 5V Logic Inputs
• Optional programmable OTP for reset settings
• Advanced and configurable protection features
– Battery and power supply voltage monitors
– Phase feedback comparator
– MOSFET VDS and Rsense over current monitors
– Analog Built-In-Self-Test, Clock monitors
– Fault condition indicator pin

2 Applications
• 12V / 24V Automotive Motor-Control Applications
– Electrical Power Steering and Steer-by-Wire
– Electrical Mechanical Brake, Brake Boost
Assist and Brake-by-Wire
– Transmission and Shift-by-Wire
– Automotive Pumps

3 Description
The DRV3233-Q1 is an integrated smart gate driver
for 12V and 24V automotive three-phase BLDC
applications. The device provides three half-bridge
gate drivers, each capable of driving high-side and
low-side N-channel power MOSFETs. The DRV3233-
Q1 generates the correct gate drive voltages using
an integrated bootstrap diode and a GVDD charge
pump. The Smart Gate Drive architecture supports
configurable peak gate drive current from 0.8mA up
to 1A source and 2A sink. The DRV3233-Q1 can
operate from a single power supply with a wide input
range of 4.5 to 60V. A trickle charge pump enables
100% PWM duty cycle control, and provides overdrive
supply voltage for external switches.
The DRV3233-Q1 provides low-side current sense
amplifiers to support resistor based low-side current
sensing. The low offset of the amplifiers enables the
system to obtain precise motor current measurement.
A wide range of diagnostics and protection features
integrated in the DRV3233-Q1 enable a robust motor
drive system design and help eliminate the needs
of external components. The highly configurable
device response allows the device to be integrated
seamlessly into a variety of system designs.