FEATURES
● HIGH POWER P1dB=42.5dBm at 14.0GHz to 14.5GHz
● HIGH GAIN G1dB=6.0dB at 14.0GHz to 14.5GHz
● BROAD BAND INTERNALLY MATCHED FET
● HERMETICALLY SEALED PACKAGE
● LOW INTERMODULATION DISTORTION
       IM3(Min.)=−25dBc at Po=36dBm Single Carrier Level