1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Logic-level compatible
• Ultra low QG, QGD for high system efficiency, especially at higher switching frequencies
• Superfast switching with soft-recovery
• Low spiking and ringing for low EMI designs
• Exposed drain pad for excellent thermal conduction
• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
3. Applications
• DC to DC conversion
• Battery management
• Low-side load switch
• Switching circuits