DESCRIPTION
The SD8250 is a high power Class C transistor specifically designed for TACAN/DME pulsed output and driver applications.
This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 output VSWR at rated RF overdrive.
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
The SD8250 is supplied in the AMPAC Hermetic Metal/Ceramic package with internal Input/Output matching structures.

■ REFRACTORY/GOLD METALLIZATION
■ EMITTER SITE BALLASTED
■ 5:1 VSWR CAPABILITY @ 1.75 dB RF OVERDRIVE
■ LOW THERMAL RESISTANCE
■ INPUT/OUTPUT MATCHING
■ OVERLAY GEOMETRY
■ METAL/CERAMIC HERMETIC PACKAGE
■ POUT = 250 W MIN. WITH 8.0 dB GAIN