3100-3500 MHz, 120 W PEAK, 32 V PULSED LATERAL N-CHANNEL RF POWER MOSFET

Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.

• Typical Pulsed Performance: VDD = 32 Volts, IDQ = 150 mA, Pout = 120 Watts Peak (24 Watts Avg.), Pulsed Signal, f = 3500 MHz, Pulse Width = 100 μsec, Duty Cycle = 20%
  Power Gain — 12 dB
  Drain Efficiency — 40%
• Typical WiMAX Performance: VDD = 32 Volts, IDQ = 900 mA, Pout = 18 Watts Avg., f = 3500 MHz, 802.16d, 64 QAM 3/4, 4 Bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
   Power Gain — 13 dB
   Drain Efficiency — 16%
   RCE — -33 dB (EVM — 2.2% rms)
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 3300 MHz, 120 Watts Peak Power
• Capable of Handling 3 dB Overdrive @ 32 Vdc

Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Greater Negative Gate-Source Voltage Range for Improved Class C Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.