Description
The EBD11UD8ABDA is 128M words × 64 bits, 2 ranks Double Data Rate (DDR) SDRAM Small Outline Dual In-line Memory Module, mounting 16 pieces of 512M bits DDR SDRAM sealed in TCP package. Read and write operations are performed at the cross points of the CK and the /CK. This high-speed data transfer is realized by the 2 bits prefetch-pipelined architecture.

Features
• 200-pin socket type small outline dual in line memory module (SO DIMM)
    - PCB height: 31.75mm
    - Lead pitch: 0.6mm
• 2.5V power supply
• Data rate: 333Mbps/266Mbps (max.)
• 2.5 V (SSTL_2 compatible) I/O
• Double Data Rate architecture; two data transfers per clock cycle
• Bi-directional, data strobe (DQS) is transmitted/received with data, to be used in capturing data at the receiver
• Data inputs, outputs and DM are synchronized with DQS
• 4 internal banks for concurrent operation (Component)
• DQS is edge aligned with data for READs; center aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK transitions
• Commands entered on each positive CK edge; data referenced to both edges of DQS
• Data mask (DM) for write data
• Auto precharge option for each burst access
• Programmable burst length: 2, 4, 8
• Programmable /CAS latency (CL): 2, 2.5
• Refresh cycles: (8192 refresh cycles /64ms)
    - 7.8µs maximum average periodic refresh interval
• 2 variations of refresh
    - Auto refresh
    - Self refresh