N-Channel Enhancement Mode

Low Qgand Rg

High dv/dt

Nanosecond Switching

Ideal for Class C, D, & E Applications

Features

•  Isolated Substrate

−  high isolation voltage (>2500V)

−  excellent thermal transfer

−  Increased temperature and power cycling capability

•  IXYS advanced low Qgprocess

•  Low gate charge and capacitances

−  easier to drive

−  faster switching

•  Low RDS(on)

•  Very low insertion inductance (<2nH)

•  No beryllium oxide (BeO) or other hazardous materials



Advantages

•  Optimized for RF and high speed switching at frequencies to 100MHz

•  Easy to mount—no insulators needed

•  High power density