Description
The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

Features
• Broadband internal matching
• Typical EDGE performance
  - Average output power = 4.0 W
  - Gain = 19 dB
  - Efficiency = 31%
• Typical CW performance
  - Output power at P–1dB = 13 W
  - Gain = 18 dB
- Efficiency = 55%
• Integrated ESD protection: Human Body Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power