General Description

This Power MOSFET is produced using Winsemi ’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply.

Features

■2A,60 0V, RDS(on)(Max 5Ω)@VGS=10V

■ Ultra-low Gate Charge(Typical 9.0nC)

■ Fast Switching Capability

■ 100%Avalanche Tested

■ Isolation Voltage ( VISO = 4000V AC )

■ Maximum Junction Temperature Range(150℃)