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N0600N Datasheet (PDF) - Renesas Technology Corp
N0600N Datasheet PDF - Renesas Technology Corp
Part # N0600N
Download  N0600N Download
File Size   237.64 Kbytes
Page   8 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description MOS FIELD EFFECT TRANSISTOR

N0600N Datasheet (PDF)

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N0600N Datasheet PDF - Renesas Technology Corp

Part # N0600N
Download  N0600N Click to download

File Size   237.64 Kbytes
Page   8 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description MOS FIELD EFFECT TRANSISTOR

N0600N Datasheet (HTML) - Renesas Technology Corp


N0600N Product details

Description

The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications.



Features

•  Low on-state resistance

  ⎯ RDS(on)1= 25 mΩMAX. (VGS=10 V, ID= 15 A)

  ⎯ RDS(on)2= 36 mΩMAX. (VGS= 4.5 V, ID= 15 A)

•  Low input capacitance

  ⎯ Ciss= 1380 pF TYP. (VDS= 10 V, VGS= 0 V)




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About Renesas Technology Corp

Renesas Technology Corp is a Japanese semiconductor company that provides a wide range of microcontrollers, system-on-chips, and analog and power devices for various applications in the automotive, industrial, and consumer markets.
The company was formed in 2010 through the merger of NEC Electronics Corporation and Renesas Technology Corporation.
Renesas is one of the largest microcontroller suppliers in the world and is known for its expertise in the development of advanced technologies in areas such as the Internet of Things (IoT), artificial intelligence (AI), and automotive electronics.
The company has operations in over 20 countries and its products are used in a wide range of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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