Features
● Low collector to emitter saturation voltage
           VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
● Built in fast recovery diode in one package
● Trench gate and thin wafer technology
● High speed switching
        tf = 68 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)