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RJP30E2DPP-M0 Datasheet (PDF) - Renesas Technology Corp

RJP30E2DPP-M0 Datasheet PDF - Renesas Technology Corp
Part # RJP30E2DPP-M0
Download  RJP30E2DPP-M0 Download
File Size   158.83 Kbytes
Page   7 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description Silicon N Channel IGBT High Speed Power Switching

RJP30E2DPP-M0 Datasheet (PDF)

Go To PDF Page Download Datasheet
RJP30E2DPP-M0 Datasheet PDF - Renesas Technology Corp

Part # RJP30E2DPP-M0
Download  RJP30E2DPP-M0 Click to download

File Size   158.83 Kbytes
Page   7 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description Silicon N Channel IGBT High Speed Power Switching

RJP30E2DPP-M0 Datasheet (HTML) - Renesas Technology Corp


RJP30E2DPP-M0 Product details

1. Trench gate technology (G5H series)

2. Low collector to emitter saturation voltage  VCE(sat)= 1.7 V typ

3. High speed switching  tf = 150 ns typ

4. Low leak current  ICES= 1 μA max

5. Isolated package TO-220FL






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About Renesas Technology Corp


Renesas Technology Corp is a Japanese semiconductor company that provides a wide range of microcontrollers, system-on-chips, and analog and power devices for various applications in the automotive, industrial, and consumer markets.
The company was formed in 2010 through the merger of NEC Electronics Corporation and Renesas Technology Corporation.
Renesas is one of the largest microcontroller suppliers in the world and is known for its expertise in the development of advanced technologies in areas such as the Internet of Things (IoT), artificial intelligence (AI), and automotive electronics.
The company has operations in over 20 countries and its products are used in a wide range of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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