RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs

Designed for CDMA and multicarrier base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

• Typical Single-Carrier W-CDMA Performance: VDD = 30 Volts, IDQ =
   1600 mA, Pout = 74 Watts Avg., IQ Magnitude Clipping, Channel
   Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
   on CCDF.
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 390 Watts CW (1)
   Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 1 dB Compression Point ≃ 245 Watts CW

Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
   and Common Source S-Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate-Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.