RJK03L3DNS Datasheet(PDF) - Renesas Technology Corp

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RJK03L3DNS Datasheet (PDF) - Renesas Technology Corp

RJK03L3DNS Datasheet PDF - Renesas Technology Corp


Part #	RJK03L3DNS

Download	RJK03L3DNS Download

File Size	130.15 Kbytes

Page	7 Pages

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

Logo

Description

Silicon N Channel Power MOS FET with Schottky Barrier Diode

RJK03L3DNS Datasheet (PDF)

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RJK03L3DNS Datasheet PDF - Renesas Technology Corp


Part #	RJK03L3DNS

Download	RJK03L3DNS Click to download

File Size	130.15 Kbytes

Page	7 Pages

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

Logo

Description	Silicon N Channel Power MOS FET with Schottky Barrier Diode

RJK03L3DNS Datasheet (HTML) - Renesas Technology Corp

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RJK03L3DNS Product details

Features
• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 5.3 mΩ typ. (at VGS = 10 V)
• Pb-free
• Halogen-free

Similar Part No. - RJK03L3DNS

Manufacturer	Part #	Datasheet	Description
Renesas Technology Corp	RJK03L2DNS	127Kb / 7P	Silicon N Channel Power MOS FET with Schottky Barrier Diode
Renesas Technology Corp	RJK03L2DNS-00-J5	127Kb / 7P	Silicon N Channel Power MOS FET with Schottky Barrier Diode

Similar Description - RJK03L3DNS

Manufacturer	Part #	Datasheet	Description
Renesas Technology Corp	RJK0379DPA	256Kb / 7P	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
	RJK0381DPA	250Kb / 7P	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
	RJK03C1DPB	268Kb / 7P	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
	RJK03C2DPB	269Kb / 7P	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
	RJK0380DPA	88Kb / 7P	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
	RJK03A04DPA	88Kb / 7P	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
	RJK03C5DPA	86Kb / 7P	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
	RJK03E6DPA	101Kb / 7P	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
	RJK03L2DNS	127Kb / 7P	Silicon N Channel Power MOS FET with Schottky Barrier Diode
	RJK03C1DPB	277Kb / 9P	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

About Renesas Technology Corp

Renesas Technology Corp is a Japanese semiconductor company that provides a wide range of microcontrollers, system-on-chips, and analog and power devices for various applications in the automotive, industrial, and consumer markets.
The company was formed in 2010 through the merger of NEC Electronics Corporation and Renesas Technology Corporation.
Renesas is one of the largest microcontroller suppliers in the world and is known for its expertise in the development of advanced technologies in areas such as the Internet of Things (IoT), artificial intelligence (AI), and automotive electronics.
The company has operations in over 20 countries and its products are used in a wide range of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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