IRFD9110 Datasheet(PDF)

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IRFD9110 Datasheet (PDF) - Intersil Corporation


Part #	IRFD9110

Download	IRFD9110 Download

File Size	54.38 Kbytes

Page	6 Pages

Manufacturer	INTERSIL [Intersil Corporation]

Direct Link	http://www.intersil.com/cda/home

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Description

0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET

IRFD9110 Datasheet (PDF)

Download Datasheet


Part #	IRFD9110

Download	IRFD9110 Click to download

File Size	54.38 Kbytes

Page	6 Pages

Manufacturer	INTERSIL [Intersil Corporation]

Direct Link	http://www.intersil.com/cda/home

Logo

Description	0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET

IRFD9110 Datasheet (HTML) - Intersil Corporation

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IRFD9110 Datasheet HTML 6Page - Intersil Corporation

IRFD9110 Product details

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 0.7A, 100V
• rDS(ON) = 1.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

Similar Part No. - IRFD9110

Manufacturer	Part #	Datasheet	Description
International Rectifier	IRFD9110	173Kb / 6P	Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-0.70A)
Fairchild Semiconductor	IRFD9110	93Kb / 7P	0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET
Harris Corporation	IRFD9110	342Kb / 6P	-0.6A and -0.7A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs
International Rectifier	IRFD9110	218Kb / 6P	1-WATT RATED POWER MOSFETs
Vishay Siliconix	IRFD9110	1Mb / 8P	Power MOSFET 07-Jul-08

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Similar Description - IRFD9110

Manufacturer	Part #	Datasheet	Description
Intersil Corporation	IRF9130	58Kb / 7P	-12A, -100V, 0.30 Ohm, P-Channel Power MOSFET February 1999
	IRF9150	57Kb / 7P	-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET February 1999
	IRF9510	59Kb / 7P	3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET July 1999
	IRF9520	57Kb / 7P	6A, 100V, 0.600 Ohm, P-Channel Power MOSFET July 1999
	IRFBC40	55Kb / 7P	6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET July 1999
	IRFD9120	52Kb / 6P	1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET July 1999
	IRFR9110	62Kb / 7P	3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs July 1999
	RFL1N08	30Kb / 4P	1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs September 1998
	RFL1N10L	29Kb / 5P	1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET September 1998
Fairchild Semiconductor	IRFD9110	93Kb / 7P	0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET

More results

About Intersil Corporation

Intersil Corporation was an American semiconductor company that specialized in the design and manufacture of high-performance analog and mixed-signal integrated circuits.
The company was founded in 1967 and was known for its expertise in power management, data conversion, and radio frequency (RF) technologies.
Intersil's products were used in a wide range of applications such as consumer electronics, industrial, telecommunications, and aerospace and defense.
In 2016, Intersil was acquired by Renesas Electronics Corporation, a Japanese semiconductor company.
The Intersil brand and technology continue to be developed and sold as part of Renesas' portfolio of products.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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