VB30100S Datasheet(PDF) - Vishay Siliconix

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VB30100S Datasheet (PDF) - Vishay Siliconix

VB30100S Datasheet PDF - Vishay Siliconix


Part #	VB30100S

Download	VB30100S Download

File Size	149.13 Kbytes

Page	5 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

Description

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A

VB30100S Datasheet (PDF)

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VB30100S Datasheet PDF - Vishay Siliconix


Part #	VB30100S

Download	VB30100S Click to download

File Size	149.13 Kbytes

Page	5 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

Description	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A

VB30100S Datasheet (HTML) - Vishay Siliconix

VB30100S Product details

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified

Similar Part No. - VB30100S

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	VB30100S	168Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A 31-Jul-08
	VB30100S	149Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier 23-Oct-09
	VB30100S	149Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier 23-Oct-09
	VB30100S	139Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier 23-Oct-09
	VB30100S-E3	156Kb / 6P	High Voltage Trench MOS Barrier Schottky Rectifier 14-Dec-16

Similar Description - VB30100S

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	V10150S	166Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A 19-May-08
	V30100S	168Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A 31-Jul-08
	V30120S	165Kb / 5P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A 19-May-08
	VB30100S-M3	88Kb / 4P	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A 15-May-13
	VBT3080S-M3	88Kb / 4P	Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A 14-May-13
	VFT3080S-M3	89Kb / 4P	Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A 11-Sep-13
	VT1060C-E3	156Kb / 6P	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A 14-Dec-16
	VT1060C-M3	133Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A 15-Dec-16
	VT3080S-E3	157Kb / 6P	Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A 14-Dec-16
	VBT1060C-M3	89Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A 14-May-13

About Vishay Siliconix

Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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