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PDTD123Y Datasheet (PDF) - NXP Semiconductors
PDTD123Y Datasheet PDF - NXP Semiconductors
Part # PDTD123Y_15
Download  PDTD123Y Download
File Size   132.71 Kbytes
Page   10 Pages
Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors
Description NPN 500 mA, 50 V resistor-equipped transistors R1 = 2.2 k廓, R2 = 10 k廓

PDTD123Y Datasheet (PDF)

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PDTD123Y Datasheet PDF - NXP Semiconductors

Part # PDTD123Y_15
Download  PDTD123Y Click to download

File Size   132.71 Kbytes
Page   10 Pages
Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors
Description NPN 500 mA, 50 V resistor-equipped transistors R1 = 2.2 k廓, R2 = 10 k廓

PDTD123Y Datasheet (HTML) - NXP Semiconductors




Similar Part No. - PDTD123Y_15

ManufacturerPart #DatasheetDescription
logo
NXP Semiconductors		 PDTD123YK PHILIPS-PDTD123YK Datasheet
948Kb / 12P		 Low VCEsat (BISS) transistors
May 2006
PDTD123YK NXP-PDTD123YK Datasheet
132Kb / 10P		 NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 10 k廓
Rev. 02-16 November 2009
logo
Nexperia B.V. All right...		 PDTD123YK NEXPERIA-PDTD123YK Datasheet
246Kb / 11P		 NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
Rev. 02 - 16 November 2009
PDTD123YQA NEXPERIA-PDTD123YQA Datasheet
1Mb / 22P		 50 V, 500 mA NPN resistor-equipped transistors
PDTD123YQA NEXPERIA-PDTD123YQA Datasheet
1Mb / 22P		 50 V, 500 mA NPN resistor-equipped transistors
Rev. 1 - 31 March 2016
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Similar Description - PDTD123Y_15

ManufacturerPart #DatasheetDescription
logo
NXP Semiconductors		 PDTB123E NXP-PDTB123E Datasheet
138Kb / 10P		 PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓
Rev. 02-16 November 2009
PDTB123Y NXP-PDTB123Y Datasheet
138Kb / 10P		 PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 10 k廓
Rev. 02-16 November 2009
PDTC123E NXP-PDTC123E Datasheet
188Kb / 14P		 NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓
2004 Aug 06
PDTC123Y NXP-PDTC123Y Datasheet
145Kb / 11P		 NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 10 k廓
Rev. 04-16 November 2009
PDTD123E NXP-PDTD123E Datasheet
131Kb / 10P		 NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓
Rev. 02-16 November 2009
PDTD123T NXP-PDTD123T Datasheet
129Kb / 10P		 NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = open
Rev. 03-16 November 2009
PDTD123Y NXP-PDTD123Y Datasheet
132Kb / 10P		 NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 10 k廓
Rev. 02-16 November 2009
PEMH20 NXP-PEMH20 Datasheet
283Kb / 9P		 NPN/NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓
Rev. 04-15 November 2009
PDTD123T PHILIPS-PDTD123T_15 Datasheet
129Kb / 10P		 NPN 500 mA, 50 V resistor-equipped transistors R1 = 2.2 k廓, R2 = open
Rev. 03-16 November 2009
PEMH20_PUMH20 PHILIPS-PEMH20_PUMH20_15 Datasheet
283Kb / 9P		 NPN/NPN resistor-equipped transistors R1 = 2.2 k廓, R2 = 2.2 k廓
Rev. 04-15 November 2009
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About NXP Semiconductors

NXP Semiconductors is a publicly traded multinational company that designs, develops, and manufactures a wide range of semiconductors and integrated circuits for various applications, including automotive, industrial, communications, and consumer markets.
The company was founded in 2006 and is headquartered in Eindhoven, Netherlands.
NXP offers a broad portfolio of products, including microcontrollers, microprocessors, secure authentication ICs, power management ICs, RF and microwave components, and sensor solutions, among others.
The company's products are designed to be energy efficient, secure, and reliable, and are used in a variety of applications, including automotive systems, industrial automation and control, smart homes and buildings, and connected devices.
NXP is dedicated to innovation and customer satisfaction, and is committed to providing its customers with the best semiconductor solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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