DESCRIPTION
NECs NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package styles. The NE680s high fT makes it ideal for low voltage/low current applications, down to as low as 0.5 V / 0.5 mA. IC max for the NE680 series is 35 mA. For higher current applications see the NE681 series. 

FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz
• LOW NOISE FIGURE:
   1.7 dB at 2 GHz
   2.6 dB at 4 GHz
• HIGH ASSOCIATED GAIN:
   12.5 dB at 2 GHz
   8.0 dB at 4 GHz
• EXCELLENT LOW VOLTAGE
   LOW CURRENT PERFORMANCE