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SIE804DF Datasheet (PDF) - Vishay Siliconix

SIE804DF Datasheet PDF - Vishay Siliconix
Part # SIE804DF
Download  SIE804DF Download
File Size   107.71 Kbytes
Page   7 Pages
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix
Description N-Channel 150-V (D-S) MOSFET

SIE804DF Datasheet (PDF)

Go To PDF Page Download Datasheet
SIE804DF Datasheet PDF - Vishay Siliconix

Part # SIE804DF
Download  SIE804DF Click to download

File Size   107.71 Kbytes
Page   7 Pages
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix
Description N-Channel 150-V (D-S) MOSFET

SIE804DF Datasheet (HTML) - Vishay Siliconix


SIE804DF Product details

• Halogen-free According to IEC 61249-2-21
• TrenchFET® Power MOSFET
• Ultra Low Thermal Resistance Using
Top-Exposed PolarPAK® Package for
Double-Sided Cooling
• Leadframe-Based New Encapsulated Package
- Die Not Exposed
- Same Layout Regardless of Die Size, > 100 V
• 100 % Rg and UIS Tested




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About Vishay Siliconix


Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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