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SIR874DP Datasheet (PDF) - Vishay Siliconix

SIR874DP Datasheet PDF - Vishay Siliconix
Part # SIR874DP
Download  SIR874DP Download
File Size   652.33 Kbytes
Page   7 Pages
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix
Description N-Channel 25-V (D-S) MOSFET

SIR874DP Datasheet (PDF)

Go To PDF Page Download Datasheet
SIR874DP Datasheet PDF - Vishay Siliconix

Part # SIR874DP
Download  SIR874DP Click to download

File Size   652.33 Kbytes
Page   7 Pages
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix
Description N-Channel 25-V (D-S) MOSFET

SIR874DP Datasheet (HTML) - Vishay Siliconix


SIR874DP Product details

• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Gen III Power MOSFET
• Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
• Optimized for High-Side Synchronous Rectifier
Operation
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/96/EC




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About Vishay Siliconix


Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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