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STFI13NM60N Datasheet (PDF) - STMicroelectronics
STFI13NM60N Datasheet PDF - STMicroelectronics
Part # STFI13NM60N
Download  STFI13NM60N Download
File Size   782.35 Kbytes
Page   12 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-channel 600 V, 0.28 Ω, 11 A MDmesh™II Power MOSFET in I²PAKFP package

STFI13NM60N Datasheet (PDF)

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STFI13NM60N Datasheet PDF - STMicroelectronics

Part # STFI13NM60N
Download  STFI13NM60N Click to download

File Size   782.35 Kbytes
Page   12 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-channel 600 V, 0.28 Ω, 11 A MDmesh™II Power MOSFET in I²PAKFP package

STFI13NM60N Datasheet (HTML) - STMicroelectronics


STFI13NM60N Product details

Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Features
■ Fully insulated and low profile package with increased creepage path from pin to heatsink plate
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance

Applications
■ Switching applications




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About STMicroelectronics

STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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