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25F Datasheet (PDF) - International Rectifier

25F Datasheet PDF - International Rectifier
Part # 25F
Download  25F Download
File Size   54.13 Kbytes
Page   6 Pages
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier
Description High surge current capability

25F Datasheet (PDF)

Go To PDF Page Download Datasheet
25F Datasheet PDF - International Rectifier

Part # 25F
Download  25F Click to download

File Size   54.13 Kbytes
Page   6 Pages
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier
Description High surge current capability

25F Datasheet (HTML) - International Rectifier


25F Product details

STANDARD RECOVERY DIODES



Features

High surge current capability

Avalanche types available

Stud cathode and stud anode version

Wide current range

Types up to 1200V VRRM



Typical Applications

Battery charges

Converters

Power supplies

Machine tool controls




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About International Rectifier


International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors.
The company was founded in 1947 and was headquartered in El Segundo, California.
IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power control products.
The company's products were used in various applications such as computing, telecommunications, and industrial automation.
IR was known for its expertise in power management and control technology and its ability to deliver high-quality and reliable products to its customers.
In 2014, IR was acquired by Infineon Technologies, a leading provider of power management and control products and other semiconductor solutions.
The International Rectifier brand is no longer in use, but its technology and products continue to be a part of Infineon's portfolio.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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