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DS_K7A803600B Datasheet (PDF) - Samsung semiconductor

DS_K7A803600B Datasheet PDF - Samsung semiconductor
Part # DS_K7A803600B
Download  DS_K7A803600B Download
File Size   401.61 Kbytes
Page   18 Pages
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Description 256Kx36 & 512Kx18 Synchronous SRAM

DS_K7A803600B Datasheet (PDF)

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DS_K7A803600B Datasheet PDF - Samsung semiconductor

Part # DS_K7A803600B
Download  DS_K7A803600B Click to download

File Size   401.61 Kbytes
Page   18 Pages
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Description 256Kx36 & 512Kx18 Synchronous SRAM

DS_K7A803600B Datasheet (HTML) - Samsung semiconductor


DS_K7A803600B Product details

GENERAL DESCRIPTION
The K7A803600B and K7A801800B are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

FEATURES
• Synchronous Operation.
• 2 Stage Pipelined operation with 4 Burst.
• On-Chip Address Counter.
• Self-Timed Write Cycle.
• On-Chip Address and Control Registers.
• 3.3V+0.165V/-0.165V Power Supply.
• I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O
• 5V Tolerant Inputs Except I/O Pins.
• Byte Writable Function.
• Global Write Enable Controls a full bus-width write.
• Power Down State via ZZ Signal.
• LBO Pin allows a choice of either a interleaved burst or a linear burst.
• Three Chip Enables for simple depth expansion with No Data Contention only for TQFP ; 2cycle Enable, 1cycle Disable.
• Asynchronous Output Enable Control.
• ADSP, ADSC, ADV Burst Control Pins.
• TTL-Level Three-State Output.
• 100-TQFP-1420A
• Operating in commeical and industrial temperature range.




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