| Manufacturer | Part # | Datasheet | Description |
 Seme LAB |
SML10SIC06SMDC
|
452Kb / 2P |
SILICON CARBIDE (SiC) SCHOTTKY DIODE
|
|
SML10SIC06Y
|
166Kb / 2P |
SILICON CARBIDE (SiC) SCHOTTKY DIODE
|
|
SML10SIC06YC
|
275Kb / 4P |
SILICON CARBIDE (SiC) SCHOTTKY DIODE
|
 STMicroelectronics |
STPSC20H12C
|
431Kb / 10P |
No or negligible reverse recovery
28-Feb-2017 |
 Littelfuse |
LSIC2SD120A15
|
823Kb / 5P |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 째C.
|
|
LSIC2SD120A20
|
826Kb / 5P |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability and a maximum operating junction temperature of 175 째C
|
|
LSIC2SD120C08
|
1Mb / 6P |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 째C
|
|
LSIC2SD120A05
|
872Kb / 6P |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current
|
|
LSIC2SD120A10
|
879Kb / 6P |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current
|
|
LSIC2SD120C10
|
729Kb / 6P |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current
|