| Manufacturer | Part # | Datasheet | Description |
 Infineon Technologies A... |
PTFB091802FC
|
1Mb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ??960 MHz
Rev. 02.1, 2016-06-10 |
|
PTFB091507FH
|
1,015Kb / 13P |
Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz
Rev. 03.1, 2016-06-09 |
|
PTRA093818NF
|
470Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 ??960 MHz
Rev. 05.1, 2017-08-16 |
 Cree, Inc |
PTFB072707FH
|
699Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 728 ??768 MHz
|
|
PTFB091507FH
|
618Kb / 13P |
Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz
|
|
PTFB091802FC
|
538Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ??960 MHz
|
|
PTFB093608FV
|
1Mb / 13P |
Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 ??960 MHz
|
|
PTRA093818NF
|
600Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 ??960 MHz
|
 WOLFSPEED, INC. |
PTRA093818NF
|
685Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 – 960 MHz
Rev. 06.2, 2022-01-04 |
|
PTRA095908NB
|
739Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 520 W, 48 V, 925 – 960 MHz
Rev. 02.2, 2022-02-13 |