| Manufacturer | Part # | Datasheet | Description |
 DB Lectro Inc |
135W
|
520Kb / 2P |
a high breakdown voltage rate of 10KV.
|
 MAKO SEMICONDUCTOR CO.,... |
MMBTA42
|
97Kb / 2P |
High breakdown voltage
|
 SemiHow Co.,Ltd. |
HDA60U60GW
|
412Kb / 3P |
High Breakdown Voltage
|
|
HDPE10U60G
|
492Kb / 3P |
High breakdown voltage
|
|
HDS20U30GW
|
410Kb / 3P |
High Breakdown Voltage
|
 ON Semiconductor |
2SA1593
|
385Kb / 9P |
Bipolar Transistor Adoption of FBET, MBIT processes
September, 2013 |
|
2SA1705
|
580Kb / 6P |
Bipolar Transistor Adoption of FBET process
September, 2013 |
|
2SA1706
|
577Kb / 6P |
Bipolar Transistor Adoption of FBET, MBIT processes
September, 2013 |
|
2SA1708
|
632Kb / 8P |
Bipolar Transistor Adoption of FBET, MBIT processes
September, 2013 |
 Shanghai Leiditech Elec... |
MMBTA42
|
1Mb / 3P |
High breakdown voltage
|