| Manufacturer | Part # | Datasheet | Description |
 Renesas Technology Corp |
RJK0601DPN-E0
|
91Kb / 7P |
N-Channel MOS FET 60 V, 110 A, 3.1 m
|
 Fairchild Semiconductor |
FDMC86570L
|
352Kb / 7P |
N-Channel Shielded Gate PowerTrench MOSFET 60 V, 56 A, 4.3 m
|
 ON Semiconductor |
FDB9503L-F085
|
529Kb / 8P |
P-Channel PowerTrench MOSFET 40 V, - 110 A, 2.6 m廓
August-2017, Rev. 2 |
|
FDB86566-F085
|
531Kb / 7P |
N-Channel PowerTrench MOSFET 60 V, 110 A, 2.7 m廓
August-2017, Rev. 2 |
|
FDB86569-F085
|
3Mb / 8P |
MOSFET ??N-Channel, POWERTRENCH 60 V, 80 A, 5.6 m
May, 2020 ??Rev. 3 |
|
FDBL86066-F085
|
483Kb / 8P |
N?륝hannel POWERTRENCH MOSFET 100 V, 240 A, 4.1 m
January, 2018 ??Rev. 2 |
|
FDMS8350LET40
|
432Kb / 8P |
MOSFET N?륝hannel POWERTRENCH
June, 2019 ??Rev. 2 |
|
NTB110N65S3HF
|
474Kb / 10P |
MOSFET ??N?륝hannel, SUPERFET III, FRFET 650 V, 30 A, 110 m
May, 2019 ??Rev. 0 |
|
FDPF035N06B-F154
|
367Kb / 10P |
MOSFET – N-Channel, POWERTRENCH 60 V, 88 A, 3.5 m
December, 2020 - Rev. 0 |
|
FDPF041N06BL1-F154
|
388Kb / 11P |
MOSFET – N-Channel, POWERTRENCH 60 V, 77 A, 4.1 m
December, 2020 - Rev. 0 |