| Manufacturer | Part # | Datasheet | Description |
 ON Semiconductor |
MC74HC1G04
|
61Kb / 6P |
High speed CMOS inverter fabricated with silicon gate CMOS technology
January, 2005 ??Rev. 8 |
 Linear Technology |
LT1089
|
92Kb / 8P |
High Side Switch Utilizing Bipolar Technology
|
 Hamamatsu Corporation |
P2532-01
|
124Kb / 4P |
Infrared detectors utilizing photoconductive effects
|
 Leshan Radio Company |
L74VHC1GU04
|
325Kb / 6P |
advanced high speed CMOS Unbuffered inverter fabricated with silicon gate CMOS technology
|
 Vishay Siliconix |
TLCY610
|
187Kb / 7P |
Utilizing ultrabright AllnGaP
16-Mar-15 |
|
VLWW960
|
251Kb / 9P |
Utilizing InGaN technology
05-Mar-08 |
 SHENZHEN REFOND OPTOELE... |
RF-A1E30-W5SE-A9
|
1Mb / 22P |
The White LED, which was fabricated by using a blue chip and the phosphor.
|
|
RF-A1E30-WYSH-C5
|
1Mb / 22P |
The White LED, which was fabricated by using a blue chip and the phosphor.
|
|
RF-BW0402DS-DD-B
|
1Mb / 22P |
The White LED which was fabricated by using a blue chip and the phosphor.
|
|
RF-WU0402DS-DD-B
|
1Mb / 22P |
The White LED which was fabricated by using a blue chip and the phosphor.
|