| Manufacturer | Part # | Datasheet | Description |
 Bourns Electronic Solut... |
CHF2010CNP
|
188Kb / 2P |
10 W Power RF Chip Termination
|
 California Eastern Labs |
NE650103M
|
259Kb / 7P |
10 W L & S-BAND POWER GaAs MESFET
|
 Cree, Inc |
CGH40010
|
948Kb / 12P |
10 W, RF Power GaN HEMT
Rev 1.4 |
|
CRF24010
|
745Kb / 10P |
10 W, SiC RF Power MESFET
Rev 1.8 |
|
CRF24060D
|
737Kb / 8P |
60 W SiC RF Power MESFET Die
Rev 1.1 |
|
CRF24060
|
637Kb / 10P |
60 W, SiC RF Power MESFET
Rev 1.2 |
 Bourns Electronic Solut... |
CHF2010XNP
|
185Kb / 2P |
10 W Power RF Chip Termination/Resistor
|
 Rohm |
S2301
|
870Kb / 12P |
N-channel SiC power MOSFET bare die
|
|
S2308
|
731Kb / 12P |
N-channel SiC power MOSFET bare die
|
 Cree, Inc |
CGH40010
|
1Mb / 15P |
10 W, RF Power GaN HEMT
Rev 4.0 |