| Manufacturer | Part # | Datasheet | Description |
 ON Semiconductor |
MMBD7000LT1G
|
126Kb / 4P |
Dual Switching Diode These Devices are Pb?묯ree, Halogen Free/BFR Free and are RoHS
August, 2009 ??Rev. 5 |
|
NTMS5835NL
|
115Kb / 6P |
Power MOSFET 40 V, 12 A, 10 m These Devices are Pb?묯ree, Halogen Free/
April, 2011 ??Rev. 1 |
|
BC489
|
86Kb / 6P |
High Current Transistors NPN Silicon These are Pb?묯ree Devices
March, 2007 ??Rev. 3 |
 Fairchild Semiconductor |
FDMS7580
|
367Kb / 7P |
N-Channel Power Trench MOSFET 25 V, 7.5 m廓
|
 Infineon Technologies A... |
ESD113-B1
|
740Kb / 16P |
Pb-free and halogen-free package
Revision 1.2, 2014-05-14 |
|
ESD205-B1
|
969Kb / 16P |
Pb-free and halogen free package
Revision 1.4, 2014-05-14 |
 ON Semiconductor |
NVTYS025P04M8L
|
267Kb / 6P |
MOSFET - Power, Single P-Channel -40 V, 25 m, -32 A
November, 2021-Rev. 0 |
|
NVLJWD023N04CL
|
140Kb / 7P |
MOSFET – Power, Dual N-Channel 40 V, 23 m, 25 A
June, 2022 - Rev. 0 |
 Guangdong Youtai Semico... |
LESD8D3.3CAT5G
|
468Kb / 4P |
These are Pb−Free Devices
|
|
LESD8D5.0CAT5G
|
379Kb / 4P |
These are Pb−Free Devices
|