| Manufacturer | Part # | Datasheet | Description |
 Samsung semiconductor |
K4C89183AF
|
1Mb / 55P |
288Mb x18 Network-DRAM2 Specification
|
 Micron Technology |
MT49H16M18C
|
1Mb / 44P |
288Mb SIO REDUCED LATENCY(RLDRAM II)
|
 NEC |
UPD44164085
|
375Kb / 32P |
18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION
|
|
UPD44324085
|
360Kb / 32P |
36M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION
|
 Micron Technology |
MT49H32M9
|
2Mb / 76P |
288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II
|
 Integrated Silicon Solu... |
IS49NLC93200
|
622Kb / 34P |
288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory
|
|
IS49NLC96400
|
629Kb / 34P |
576Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory
|
|
IS49NLS96400
|
575Kb / 34P |
576Mb (x9, x18) Separate I/O RLDRAM??2 Memory
|
 Micron Technology |
MT44K32M18
|
6Mb / 111P |
576Mb: x18, x36 RLDRAM 3
|
 Renesas Technology Corp |
R1Q6A7236ABG
|
803Kb / 35P |
72-Mbit DDRII SRAM Separate I/O 2-word Burst
|