| Manufacturer | Part # | Datasheet | Description |
 Diodes Incorporated |
DMG4406LSS
|
232Kb / 6P |
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Rev 7 |
 Texas Instruments |
CSD16407Q5C
|
345Kb / 11P |
ID The NexFET??power MOSFET has been designed to minimize losses in power conversion applications.
|
|
CSD16408Q5
|
323Kb / 11P |
The NexFET power MOSFET has been designed to minimize losses in power conversion applications.
|
|
CSD16408Q5C
|
340Kb / 11P |
The NexFET power MOSFET has been designed to minimize losses in power conversion applications.
|
|
CSD17302Q5A
|
521Kb / 11P |
The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
|
|
CSD17304Q3
|
532Kb / 11P |
The NexFET power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
|
|
CSD18503Q5A
|
730Kb / 12P |
The NexFET power MOSFET has been designed to minimize losses in power conversion applications.
|
|
CSD18504Q5A
|
745Kb / 12P |
The NexFET power MOSFET has been designed to minimize losses in power conversion applications.
|
|
CSD18531Q5A
|
1Mb / 12P |
The NexFET power MOSFET has been designed to minimize losses in power conversion applications.
|
 Diodes Incorporated |
DMG4511SK4
|
202Kb / 10P |
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Rev 4 |