| Manufacturer | Part # | Datasheet | Description |
 IXYS Corporation |
IXSR40N60BD1
|
39Kb / 2P |
IGBT with Diode ISOPLUS 247 (Electrically Isolated Backside)
|
|
IXSR35N120BD1
|
74Kb / 2P |
IGBT with Diode ISOPLUS 247 (Electrically Isolated Backside)
|
|
IXEL40N400
|
173Kb / 5P |
Very High Voltage IGBT ( Electrically Isolated Tab)
|
|
IXTF1N400
|
152Kb / 4P |
High Voltage Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode
|
|
IXGR72N60B3H1
|
249Kb / 7P |
GenX3 600VIGBT W/ Diode Electrically Isolated Tab
|
 M.S. Kennedy Corporatio... |
MSK5115-00
|
389Kb / 5P |
Electrically Isolated Top Tab or Z Tab SIP
|
|
MSK5116-17
|
123Kb / 5P |
Electrically Isolated Top Tab or Z Tab SIP
|
 IXYS Corporation |
IXGR39N60B
|
519Kb / 2P |
HiPerFASTTM IGBT (Electrically Isolated Backside)
|
|
IXGR40N60B
|
58Kb / 2P |
HiPerFASTTM IGBT (Electrically Isolated Backside)
|
|
IXGR50N60A2U1
|
150Kb / 6P |
Low Saturation Voltage IGBT with Low Forward Drop Diode Electrically Isolated Mounting Tab
|