| Manufacturer | Part # | Datasheet | Description |
KODENSHI_AUK CORP. |
PS-117L
|
175Kb / 2P |
Paper sensors(photo switches are composed of a modulated infrared emitting)
|
|
PS-R11L
|
164Kb / 2P |
Paper sensors(photo switches are composed of a modulated infrared emitting)
|
|
PS-R50L
|
167Kb / 2P |
Paper sensors(photo switches are composed of a modulated infrared emitting)
|
|
PSR11L
|
243Kb / 2P |
composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC at the light receiving side
|
Everlight Electronics C... |
ITR9702
|
235Kb / 8P |
Gallium arsenide infrared emitting diode which is coupled with a silicon photo transistor in a plastic housing
|
Toshiba Semiconductor |
TLP595G
|
318Kb / 8P |
The Toshiba TLP595G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET
|
List of Unclassifed Man... |
TLP580
|
332Kb / 3P |
GaAIAs INFRARED EMITTING DIODE AND NPN SILICON PHOTO-TRANSISTOR
|
OPTEK Technologies |
OP250
|
254Kb / 3P |
Infrared Light Emitting Diode
|
Roithner LaserTechnik G... |
ELD-810-525
|
654Kb / 3P |
infrared light emitting diode
|
TT Electronics. |
OPR2800
|
265Kb / 2P |
Infrared Light Emitting Diode
|
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