NE55410GR pdf, NE55410GR Description, NE55410GR Datasheet, NE55410GR view ::: ALLDATASHEET :::

Part #	NE55410GR

Description	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER

File Size	317.31 Kbytes

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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Similar Part No. - NE55410GR

Manufacturer	Part #	Datasheet	Description
California Eastern Labs	NE55410GR	558Kb / 13P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
NEC	NE55410GR	186Kb / 13P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
California Eastern Labs	NE55410GR-T3-AZ	558Kb / 13P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
NEC	NE55410GR-T3-AZ	186Kb / 13P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
California Eastern Labs	NE55410GR	580Kb / 14P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER

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California Eastern Labs	NE55410GR	558Kb / 13P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
California Eastern Labs	NE55410GR	580Kb / 14P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
NEC	NE55410GR	186Kb / 13P	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
California Eastern Labs	NE5531079A	382Kb / 8P	7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
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