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12N50G-TQ2-R Distributor |
| Distributor | Part # | Manufacturer | Description | Price | Qty. BuyNow | |
![]() Avnet Americas | FDPF12N50NZ | onsemi | Power MOSFET, N-Channel, UniFETTM II, 500 V, 11.5 A, 520 mO, TO-220F - Rail/Tube (Alt: FDPF12N50NZ) RoHS : Not Compliant |
| 0 | |
| STF12N50M2 | STMicroelectronics | - Bulk (Alt: 45AC7556) RoHS : Compliant |
| 0 | ||
| SIHA12N50E-GE3 | Vishay Intertechnologies | - Tape and Reel (Alt: SIHA12N50E-GE3) RoHS : Compliant |
| 0 | ||
| SIHB12N50E-GE3 | Vishay Intertechnologies | - Tape and Reel (Alt: SIHB12N50E-GE3) RoHS : Compliant |
| 0 | ||
| SIHP12N50E-GE3 | Vishay Intertechnologies | - Tape and Reel (Alt: SIHP12N50E-GE3) RoHS : Compliant |
| 0 | ||
| NB12N50683KBB | Kyocera AVX Components | Thermistor NTC 68KOhm 10% 2-Pin 0805 Cardboard T/R - Tape and Reel (Alt: NB12N50683KBB) RoHS : Compliant | 0 | |||
| IRFC12N50C | Vishay Intertechnologies | - Bulk (Alt: IRFC12N50C) RoHS : Not Compliant | 0 | |||
| R3112N501A-TR-FE | Nisshinbo Micro Devices | VOLTAGE DETECTOR WITH DELAY FUNCTION - Tape and Reel (Alt: R3112N501A-TR-FE) RoHS : Not Compliant |
| 0 | ||
| SIHP12N50E-BE3 | Vishay Intertechnologies | - Rail/Tube (Alt: SIHP12N50E-BE3) RoHS : Compliant |
| 0 | ||
ZXT12N50DXTC![]() | Diodes Incorporated | - Tape and Reel (Alt: ZXT12N50DXTC) RoHS : Compliant | 0 | |||
ZXT12N50DXTA![]() | Diodes Incorporated | - Tape and Reel (Alt: ZXT12N50DXTA) RoHS : Compliant |
| 0 | ||
| SIHD12N50E-T1-GE3 | Vishay Intertechnologies | N-CHANNEL 500V - Tape and Reel (Alt: SIHD12N50E-T1-GE3) RoHS : Compliant |
| 0 | ||
| SIHD12N50E-GE3 | Vishay Intertechnologies | - Tape and Reel (Alt: SIHD12N50E-GE3) RoHS : Compliant |
| 0 | ||
| SIHA12N50E-E3 | Vishay Intertechnologies | - Tape and Reel (Alt: SIHA12N50E-E3) RoHS : Compliant |
| 0 | ||
| R3112N501C-TR-FE | Nisshinbo Micro Devices | VOLTAGE DETECTOR WITH DELAY FUNCTION - Tape and Reel (Alt: R3112N501C-TR-FE) RoHS : Not Compliant |
| 0 | ||
![]() Newark | STF12N50M2 | STMicroelectronics | MOSFET, N-CH, 500V, 10A, TO-220FP; RoHS : Compliant |
| 1,018 | |
| STP12N50M2 | STMicroelectronics | MOSFET, N-CH, 500V, 10A, TO-220; RoHS : Compliant |
| 824 | ||
ZXT12N50DXTA![]() | Diodes Incorporated | BIPOLAR ARRAY, DUAL NPN, 50V, 3A, MSOP-8; RoHS : Compliant |
| 109 | ||
ZXT12N50DXTA![]() | Diodes Incorporated | BIPOLAR ARRAY, DUAL NPN, 50V, 3A, MSOP-8; RoHS : Compliant |
| 109 | ||
IXFP12N50P![]() | IXYS Corporation | MOSFET, N-CH, 500V, 12A, TO-220; RoHS : Compliant |
| 36 | ||
| SIHP12N50E-GE3 | Vishay Intertechnologies | MOSFET, N-CH, 500V, 10.5A, TO220AB-3; RoHS : Compliant |
| 32 | ||
| SIHA12N50E-GE3 | Vishay Intertechnologies | MOSFET, N-CH, 500V, 10.5A, TO-220FP; RoHS : Compliant |
| 12 | ||
| IXTP12N50P | Littelfuse Inc | MOSFET, N-CH, 500V, 12A, TO-220AB-3; RoHS : Compliant |
| 0 | ||
| IXTP12N50PM | Littelfuse Inc | MOSFET, N-CH, 500V, 6A, TO-220-3; RoHS : Compliant |
| 0 | ||
| IXFA12N50P-TRL | Littelfuse Inc | MOSFET, N-CH, 500V, 12A, TO-263; RoHS : Compliant |
| 0 | ||
| SIHB12N50E-GE3 | Vishay Intertechnologies | MOSFET, N CHANNEL, 500V, 10.5A, TO-263-3; RoHS : Compliant |
| 0 | ||
| SIHB12N50E-GE3 | Vishay Intertechnologies | MOSFET, N CHANNEL, 500V, 10.5A, TO-263-3; RoHS : Compliant |
| 0 | ||
| SIHD12N50E-GE3 | Vishay Intertechnologies | MOSFET, N-CH, 500V, 10.5A, TO-252-3; RoHS : Compliant |
| 0 | ||
| SIHD12N50E-GE3 | Vishay Intertechnologies | MOSFET, N-CH, 500V, 10.5A, TO-252-3; RoHS : Compliant |
| 0 | ||
| R3112N501A-TR-FE | Nisshinbo Micro Devices | LOW VOLTAGE DETECTOR WITH OUTPUT DELAY (; RoHS : Compliant |
| 0 | ||
![]() RS | IXFP12N50P | Littelfuse Inc | DiscMosfetN-CH HiPerFET-Pola TO-220AB/FP RoHS : Compliant |
| 0 | |
| IXTP12N50P | Littelfuse Inc | Disc Mosfet N-CH Std-Polar TO-220AB/FP RoHS : Compliant |
| 0 | ||
| IXTA12N50P | Littelfuse Inc | Disc Mosfet N-CH Std-Polar TO-263D2 RoHS : Compliant |
| 0 | ||
| IXFA12N50P | Littelfuse Inc | DiscMosfetN-CH HiPerFET-Polar TO-263D2 RoHS : Compliant |
| 0 | ||
| IXTP12N50PM | Littelfuse Inc | Disc Mosfet N-CH Std-Polar TO-220AB/FP RoHS : Compliant |
| 0 | ||
| ACB-12-N-50A | OptiFuse | AUTOMOTIVE CIRCUIT BREAKER, AUTO RESET, 10-32 STUD, 12V, 50A |
| 0 | ||
SIHB12N50C-E3![]() | Vishay Siliconix | SIHB12N50C-E3 N-CHANNEL MOSFET TRANSISTOR, 12 A, 500 V, 3-PIN D2PAK RoHS : Contact Manufacturer |
| 0 | ||
| MOCB-12-N-50A | OptiFuse | AUTOMOTIVE CIRCUIT BREAKER, MODIFIED RESET, 10-32 STUD, 12V, 50A |
| 0 | ||
| IXFA12N50P-TRL | Littelfuse Inc | IXFA12N50P TRL RoHS : Compliant |
| 0 | ||
![]() STMicroelectronics | STD12N50DM2 | STMicroelectronics | N-channel 500 V, 0.299 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package RoHS : Compliant |
| 2,078 | |
| STP12N50M2 | STMicroelectronics | N-channel 500 V, 325 mOhm typ., 10 A MDmesh M2 Power MOSFET in TO-220 package RoHS : Compliant |
| 360 | ||
| STF12N50DM2 | STMicroelectronics | N-channel 500 V, 0.299 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP package RoHS : Compliant |
| 94 | ||
| STD12N50M2 | STMicroelectronics | N-channel 500 V, 325 mOhm typ., 10 A MDmesh M2 Power MOSFET in a DPAK package RoHS : Compliant |
| 68 | ||
| STF12N50M2 | STMicroelectronics | N-channel 500 V, 325 mOhm typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP package RoHS : Compliant |
| 0 | ||
![]() Bisco Industries | 12N502 | MISC. INDUSTRIAL HRD | 1 | |||
![]() Onlinecomponents.com | MOCB-12-N-50A | OptiFuse | Modified Reset- 10-32 Stud 12V 50A RoHS : Compliant |
| 429 | |
IXTP12N50P![]() | IXYS Corporation | Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220 RoHS : Not Compliant |
| 32 | ||
| FDB12N50TM | onsemi | Power MOSFET N-Channel UniFETTM 500 V 11.5 A 650 mΩ D2PAK RoHS : Not Compliant |
| 1 | ||
| IXFA12N50P-TRL | Littelfuse Inc | IXFA12N50P TRL RoHS : Compliant |
| 0 | ||
| IXFP12N50P | Littelfuse Inc | RoHS : Compliant |
| 0 | ||
| BLS226K112N504 | Knowles CDE | FILM RoHS : Compliant |
| 0 | ||
| FHDM12N5001/S35A | Baumer Electric Ag | Diffuse Sensor RoHS : Compliant |
| 0 | ||
| FHDM12N5001 | Baumer Electric Ag | FHDM 12N5001 RoHS : Compliant |
| 0 | ||
| IXTA12N50P | Littelfuse Inc | Disc Mosfet N-Ch Std-Polar To-263D2/Tube |Littelfuse IXTA12N50P RoHS : Compliant |
| 0 | ||
| R3112N501A-TR-FE | Nisshinbo Micro Devices | RoHS : Compliant |
| 0 | ||
| RM12N500T2 | Rectron Semiconductor | MOSFET TO-220 RoHS : Compliant |
| 0 | ||
| R3112N501C-TR-FE | Nisshinbo Micro Devices | RoHS : Compliant |
| 0 | ||
| BLS236K112N504 | Knowles CDE | FILM RoHS : Compliant |
| 0 | ||
| IXFA12N50P | Littelfuse Inc | RoHS : Compliant |
| 0 | ||
![]() Rochester Electronics | FDB12N50TM | onsemi | Power MOSFET, N-Channel, UniFETTM, 500 V, 11.5 A, 650 mΩ, D2PAK RoHS : Not Compliant |
| 573 | |
| NTB12N50T4 | onsemi | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Not Compliant |
| 3,914 | ||
| FDPF12N50NZ | onsemi | Power MOSFET, N-Channel, UniFETTM II, 500 V, 11.5 A, 520 mΩ, TO-220F RoHS : Compliant |
| 133 | ||
| SPP12N50C3XKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant |
| 10,179 | ||
| SPI12N50C3XKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS : Compliant |
| 950 | ||
| SPI12N50C3IN | Infineon Technologies AG | 650V and 700V CoolMOS N-Channel Power MOSFET RoHS : Compliant |
| 928 | ||
SPW12N50C3FKSA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD RoHS : Compliant |
| 2,770 | ||
| FDB12N50UTM | Fairchild Semiconductor Corporation | MOSFET N-Channel 500V 10A D2PAK RoHS : Compliant |
| 2,040 | ||
FDPF12N50FT![]() | Fairchild Semiconductor Corporation | Power MOSFET, N-Channel, UniFETTM, FRFET®, 500 V, 11.5 A, 700 mΩ, TO-220F RoHS : Compliant |
| 24,145 | ||
FDPF12N50NZ![]() | Fairchild Semiconductor Corporation | Power MOSFET, N-Channel, UniFETTM II, 500 V, 11.5 A, 520 mΩ, TO-220F RoHS : Compliant |
| 1,000 | ||
| FDPF12N50T | Fairchild Semiconductor Corporation | Power MOSFET, N-Channel, UniFETTM, 500 V, 11.5 A, 650 mΩ, TO-220F RoHS : Compliant |
| 17,990 | ||
FDPF12N50UT![]() | Fairchild Semiconductor Corporation | Power MOSFET, N-Channel, UniFETTM, Ultra FRFETTM, 500V, 10A, 800mΩ, TO-220F RoHS : Compliant |
| 879 | ||
| HGTH12N50C1D | Harris Semiconductor | Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-218AC RoHS : Not Compliant |
| 483 | ||
| HGTH12N50CID | Harris Semiconductor | 12A, 500V, N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE RoHS : Not Compliant |
| 1,374 | ||
R3112N501A-TR-FE![]() | Ricoh Electronic Devices Co Ltd | Voltage Supervisor/Reset IC, Fixed, 1 Channel, +5V, CMOS, PDSO5 RoHS : Compliant |
| 12,000 | ||
![]() TME | SIHP12N50E-GE3 | Vishay Intertechnologies | Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 121A; 114W; TO220AB RoHS : Compliant |
| 456 | |
IXTP12N50P![]() | IXYS Corporation | Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB RoHS : Compliant |
| 268 | ||
| FDPF12N50T | onsemi | Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP RoHS : Compliant |
| 152 | ||
| FDB12N50TM | onsemi | Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK RoHS : Compliant |
| 0 | ||
| FHDM 12N5003/S35A | Baumer Electric Ag | Sensor: photoelectric; Range: 15÷300mm; NPN; DARK-ON,LIGHT-ON |
| 0 | ||
| STF12N50M2 | STMicroelectronics | Transistor: N-MOSFET; unipolar; 500V; 10A; Idm: 40A; 85W; TO220FP RoHS : Compliant |
| 0 | ||
| SIHD12N50E-GE3 | Vishay Intertechnologies | Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 21A; 114W RoHS : Compliant |
| 0 | ||
| ACBP-12-N-50A | OptiFuse | Fuse: fuse; 31x21x16.6mm; automotive; 50A; 12VDC |
| 0 | ||
| SIHA12N50E-E3 | Vishay Intertechnologies | Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 21A; 32W; TO220FP RoHS : Compliant |
| 0 | ||
| MOCB-12-N-50A | OptiFuse | Fuse: fuse; 31.8x20.51x15.49mm; automotive; 50A; 12VDC |
| 0 | ||
| SIHB12N50E-GE3 | Vishay Intertechnologies | Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 21A; 114W RoHS : Compliant |
| 0 | ||
IXTP12N50PM![]() | IXYS Corporation | Transistor: N-MOSFET; 500V; 6A; 50W; TO220-3; 400ns RoHS : Compliant |
| 0 | ||
IXTA12N50P![]() | IXYS Corporation | Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263 RoHS : Compliant |
| 0 | ||
| FHDM 12N5001 | Baumer Electric Ag | Sensor: photoelectric; Range: 15÷300mm; NPN; DARK-ON,LIGHT-ON |
| 0 | ||
| IXFA12N50P-TRL | IXYS Corporation | Transistor: N-MOSFET; 500V; 12A; 200W; D2PAK,TO263; 300ns RoHS : Compliant |
| 0 | ||
![]() ComSIT USA | SIHD12N50EGE3 | Vishay Intertechnologies | POWER MOSFET Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS : Compliant | 3,000 | ||
| STP12N50M2 | STMicroelectronics | N-CHANNEL 500 V, 0.325 OHM TYP., 10 A MDMESH II PLUS LOW QG POWER MOSFET IN A TO-220 PACKAGE Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET RoHS : Compliant | 2,000 | |||
| STF12N50M2 | STMicroelectronics | N-CHANNEL 500 V, 0.325 OHM TYP., 10 A MDMESH II PLUS LOW QG POWER MOSFET IN A TO-220FP PACKAGE Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET RoHS : Compliant | 2,000 | |||
| SIHP12N50CE3 | Vishay Siliconix | POWER MOSFET Power Field-Effect Transistor, 12A I(D), 500V, 0.555ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant | 900 | |||
SPA12N50C3![]() | Infineon Technologies AG | COOL MOS POWER TRANSISTOR Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant | 200 | |||
SPP12N50C3![]() | Infineon Technologies AG | COOL MOS POWER TRANSISTOR Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant | 87 | |||
![]() NexGen Digital | CHV1812N500222KXT | Cal-Chip Electronics | RoHS : Compliant | 861 | ||
![]() PEI Genesis | 03F4005S2312N5-047 | SOURIAU-SUNBANK |
| 0 | ||
![]() PUI | MOCB-12-N-50A | 429 | ||||
![]() Richardson RFPD | C12N50Z4 | TTM Technologies | Surface Mount Termination RoHS : Compliant |
| 11,700 | |
![]() Chip 1 Exchange | FDB12N50TM | onsemi | INSTOCK RoHS : Compliant | 20,800 | ||
![]() Avnet Abacus | NB12N50683KBB | Kyocera AVX Components | Thermistor NTC 68KOhm 10 2Pin 0805 Cardboard TR - Tape and Reel (Alt: NB12N50683KBB) RoHS : Compliant | 0 | ||
![]() Avnet Silica | STF12N50DM2 | STMicroelectronics | (Alt: STF12N50DM2) RoHS : Compliant | 2,500 | ||
| STF12N50M2 | STMicroelectronics | (Alt: STF12N50M2) RoHS : Compliant | 2,000 | |||
ZXT12N50DXTA![]() | Diodes Incorporated | (Alt: ZXT12N50DXTA) RoHS : Compliant | 1,000 | |||
| FDB12N50TM | onsemi | Power MOSFET NChannel UniFETTM 500 V 115 A 650 m D2PAK (Alt: FDB12N50TM) RoHS : Compliant | 0 | |||
| STD12N50M2 | STMicroelectronics | (Alt: STD12N50M2) RoHS : Compliant | 0 | |||
| STD12N50DM2 | STMicroelectronics | (Alt: STD12N50DM2) RoHS : Compliant | 0 | |||
ZXT12N50DXTC![]() | Diodes Incorporated | (Alt: ZXT12N50DXTC) RoHS : Compliant | 0 | |||
![]() Component Electronics, Inc | CHV1812N500333KXT![]() | Cal-Chip Electronics | IN STOCK SHIP TODAY RoHS : Compliant | 30 | ||
![]() EBV Elektronik | FDB12N50TM | onsemi | Power MOSFET NChannel UniFETTM 500 V 115 A 650 m D2PAK (Alt: FDB12N50TM) RoHS : Compliant | 0 | ||
| STD12N50M2 | STMicroelectronics | (Alt: STD12N50M2) RoHS : Compliant | 0 | |||
| STP12N50M2 | STMicroelectronics | (Alt: STP12N50M2) RoHS : Compliant | 0 | |||
| STF12N50M2 | STMicroelectronics | (Alt: STF12N50M2) RoHS : Compliant | 0 | |||
| STD12N50DM2 | STMicroelectronics | (Alt: STD12N50DM2) RoHS : Compliant | 0 | |||
| STF12N50DM2 | STMicroelectronics | (Alt: STF12N50DM2) RoHS : Compliant | 0 | |||
| SIHA12N50E-E3 | Vishay Intertechnologies | (Alt: SIHA12N50E-E3) RoHS : Compliant | 0 | |||
| SIHB12N50E-GE3 | Vishay Intertechnologies | (Alt: SIHB12N50E-GE3) RoHS : Compliant | 0 | |||
| SIHP12N50E-GE3 | Vishay Intertechnologies | (Alt: SIHP12N50E-GE3) RoHS : Compliant | 0 | |||
| SIHD12N50E-GE3 | Vishay Intertechnologies | (Alt: SIHD12N50E-GE3) RoHS : Compliant | 0 | |||
![]() Flip Electronics | FDPF12N50FT | onsemi | Stock RoHS : Compliant | 1,000 | ||
| FDPF12N50NZ | onsemi | Stock, Ship Today RoHS : Compliant |
| 1,000 | ||
![]() Maritex | FDB12N50TM | onsemi | MOSFETs; FDB12N50TM; ON SEMICONDUCTOR; 11.5 A; 500 V; 650 m?; 30 V RoHS : Compliant |
| 1,466 | |
![]() Master Electronics | FDB12N50TM | onsemi | Power MOSFET N-Channel UniFETTM 500 V 11.5 A 650 mΩ D2PAK RoHS : Not Compliant |
| 0 | |
| MOCB-12-N-50A | OptiFuse | Modified Reset- 10-32 Stud 12V 50A RoHS : Compliant |
| 0 | ||
![]() Vyrian | IXFH12N50F![]() | IXYS Corporation | Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 RoHS : Compliant | 17,143 | ||
| SPP12N50C3XKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant | 13,227 | |||
SPB12N50C3ATMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant | 13,141 | |||
SPA12N50C3XKSA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant | 9,456 | |||
SPW12N50C3FKSA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD RoHS : Compliant | 9,267 | |||
| FDB12N50FTM_WS | onsemi | Power Field-Effect Transistor, 11.5A I(D), 500V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant | 8,895 | |||
| NTB12N50 | onsemi | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Not Compliant | 6,714 | |||
SPP12N50C3HKSA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant | 6,630 | |||
| STF12N50M2 | STMicroelectronics | Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET RoHS : Compliant | 6,570 | |||
| SPI12N50C3XKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS : Compliant | 4,715 | |||
![]() Win Source Electronics | ZXT12N50DXTA![]() | Diodes Incorporated | TRANS 2NPN 50V 3A 8MSOP RoHS : Compliant |
| 15,100 | |
| FDB12N50TM | Fairchild Semiconductor Corporation | MOSFET N-CH 500V 11.5A D2PAK RoHS : Compliant |
| 10,000 | ||
| AOTF12N50 | Alpha & Omega Semiconductor | 500V, 12A N-Channel MOSFET | MOSFET N-CH 500V 12A TO220F RoHS : Compliant |
| 10,000 | ||
![]() Wuhan P&S | FDB12N50TM | onsemi | 500V, 11.5A, 650m��, N-Channel Power MOSFET RoHS : Compliant |
| 15,200 |
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